FDC6401N in Reel by onsemi | Mosfet | Future Electronics
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Référence fabricant

FDC6401N

Dual N-Channel 20 V 70 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2408
Product Specification Section
onsemi FDC6401N - Caractéristiques techniques
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 4.6nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC6401N is a 20 V 3.0 A, 2.5 V specified PowerTrench Dual N- Channel Mosfet available in a SSOT-6 Package .

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Product Features:

  • 3.0 A, 20 V
  • RDS(ON) = 70 mΩ @ VGS = 4.5 V
  • RDS(ON) = 95 mΩ @ VGS = 2.5 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(on)
  • High power and current handling capability

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Voir plus...
Pricing Section
Stock global :
75 000
États-Unis:
75 000
Sur commande :Order inventroy details
57 000
Stock d'usine :Stock d'usine :
54 000
Délai d'usine :
13 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
765,00 $
USD
Quantité
Prix unitaire
3 000
$0.255
9 000
$0.25
15 000+
$0.245