Référence fabricant
25LC512T-I/SN
25LC512 Series 512 Kbit (64K x 8) 5.5 V SMT SPI Bus Serial EEPROM - SOIC-8
Microchip 25LC512T-I/SN - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Fixed clock bit count and page size errors on Byte Write and Page Write sequences. Made minor grammar and punctuation fixes throughout the document. Updated SOIC and SOIJ package drawings..Change Implementation Status: CompleteDate Document Changes Effective: 13 Jul 2022NOTE: Please be advised that this is a change to the document only the product has not been changed.Markings to Distinguish Revised from Unrevised Devices::N/A
Revision History:February 7, 2022: Issued final notification.April 6, 2022: Re-issuance of PCN to update the affected CPN list. Update the estimated first shipment date on March 30, 2022.Description of Change:Qualification of 3280 die attach material and new lead frame design for selected products available in 8L SOIC package assembled at MMT assembly site.Pre and Post Change Summary: See attachedImpacts to Data Sheet:NoneChange ImpactNoneReason for Change:To improve productivity by qualifying new lead frame design and die attach material.Change Implementation Status:In ProgressEstimated First Ship Date:March 30, 2022 (date code: 2214)Note: Please be advised that after the estimated first ship date customers may receive pre and post change parts.Time Table Summary: See attached
CCB 4993 Final Notice: Qualification of 3280 die attach material and new lead frame design for selected products available in 8L SOIC package assembled at MMT assembly site.PCN Type: Manufacturing ChangeDescription of Change:Qualification of 3280 die attach material and new lead frame design for selected products available in 8L SOIC package assembled at MMT assembly site.Impacts to Data Sheet: NoneChange Impact: NoneReason for Change:To improve productivity by qualifying new lead frame design and die attach material.Change Implementation Status: In ProgressEstimated First Ship Date: February 28, 2022 (date code: 2210)
NOTICE WITHDRAWALPCN Status: Cancellation of Notification.Reason for Change:Microchip has decided to not qualify a new lead frame design for selected products available in 8L SOIC package using 8390A die attach and palladium coated copper with gold flash (CuPdAu) bond wire material assembled at MMT assembly site.Revision History:February 09, 2021: Issued initial notification.February 01, 2022: Issued cancellation notification.
Statut du produit:
Microchip 25LC512T-I/SN - Caractéristiques techniques
Memory Density: | 512kb |
Memory Organization: | 64 K x 8 |
Supply Voltage-Nom: | 2.5V to 5.5V |
Clock Frequency-Max: | 10MHz |
Write Cycle Time-Max (tWC): | 5ms |
Style d'emballage : | SOIC-8 |
Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The 25LC512 is a 512 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select [CS(bar)] input.
Communication to the device can be paused via the hold pin [HOLD(bar)]. While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25LC512 is available in standard packages including 8-lead PDIP, SOIC, and advanced 8-lead DFN package. All packages are Pb-free and RoHS compliant.
Features:
- 20 MHz max. Clock Speed
- Byte and Page-level Write Operations
- 128-byte page
- 5 ms max.
- No page or sector erase required
- Low-Power CMOS Technology
- Max. Write Current: 5 mA at 5.5 V, 20 MHz
- Read Current: 10 mA at 5.5 V, 20 MHz
- Standby Current: 1 μA at 2.5 V (Deep powerdown)
- Electronic Signature for Device ID
- Self-Timed Erase and Write cycles
- Page Erase (5 ms, typical)
- Sector Erase (10 ms/sector, typical)
- Bulk Erase (10 ms, typical)
- Sector Write Protection (16 K byte/sector)
- Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- High Reliability
- Endurance: 1 Million erase/write cycles
- Data Retention: >200 years
- ESD Protection: >4000 V
- Temperature Ranges Supported:
- Industrial (I): -40°C to +85°C
- Pb-free and RoHS Compliant
Learn more about the 25LC512 family of EEPROM
Emballages disponibles
Qté d'emballage(s) :
3300 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount