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Manufacturer Part #

STP55NF06

N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220

Product Specification Section
STMicroelectronics STP55NF06 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 44.5nC
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The STP55NF06 is a Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • 100% avalanche tested
  • Exceptional dv/dt capability

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$810.00
USD
Quantity
Web Price
50
$0.405
4,000
$0.395
6,000
$0.39
8,000
$0.39
10,000+
$0.375