Manufacturer Part #
STP55NF06
N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220
Product Specification Section
STMicroelectronics STP55NF06 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STP55NF06 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 110|W |
Qg Gate Charge: | 44.5nC |
Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
The STP55NF06 is a Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features:
- 100% avalanche tested
- Exceptional dv/dt capability
Applications:
- Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Web Price
1
$0.46
100
$0.44
300
$0.425
1,250
$0.405
4,000+
$0.375
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)