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Manufacturer Part #

STP55NF06L

N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220

Product Specification Section
STMicroelectronics STP55NF06L - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 95|W
Qg Gate Charge: 37nC
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The STP55NF06L is a Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application oriented characterization

Applications:

  • Switching application
Pricing Section
Global Stock:
14,850
Germany (Online Only):
14,850
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$40.25
USD
Quantity
Web Price
50
$0.805
250
$0.765
1,250
$0.73
2,500
$0.715
7,500+
$0.67