Référence fabricant
IRF7341TRPBF
Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
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Infineon IRF7341TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
Infineon IRF7341TRPBF - Caractéristiques techniques
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 50mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 24nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.7A |
| Turn-on Delay Time: | 8.3ns |
| Turn-off Delay Time: | 32ns |
| Rise Time: | 3.2ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | Generation V |
| Input Capacitance: | 740pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRF7341TRPBF is a Fifth Generation HEXFET from International Rectifier that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. For more information, please see the datasheet above.
The IRF7341TRPBF comes in a SO-08 package. It comes Tape and Reel as indicated by the TR, and is lead free as indicated by PBF.Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount