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Product Specification Section
ROHM SCT2H12NZGC11 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 3.7A
Input Capacitance: 184pF
Power Dissipation: 35W
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
450
Multiple Of:
450
Total
$1,705.50
USD
Quantity
Unit Price
30
$3.87
90
$3.82
150
$3.79
600
$3.72
900+
$3.68