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Manufacturer Part #

NVH4L070N120M3S

N-Channel 1200 V 34 A 160 W Through Hole Silicon Carbide MOSFET - TO-247-4L

Product Specification Section
onsemi NVH4L070N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 34A
Input Capacitance: 1230pF
Power Dissipation: 160W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
90
Germany (Online Only):
90
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$251.10
USD
Quantity
Unit Price
30
$8.37
90
$8.31
120
$8.29
300
$8.23
450+
$8.18