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Manufacturer Part #

NTHL160N120SC1

N-Channel 1200 V 17 A 119 W Through Hole Silicon Carbide MOSFET - TO-247-3

Product Specification Section
onsemi NTHL160N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 17A
Input Capacitance: 665pF
Power Dissipation: 119W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
35
Germany (Online Only):
35
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4.60
USD
Quantity
Unit Price
1
$4.60
15
$4.50
40
$4.44
150
$4.37
400+
$4.24