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Manufacturer Part #

NTHL045N065SC1

N-Channel 650 V 66 A 291 W Through Hole Silicon Carbide MOSFET - TO-247-3

Product Specification Section
onsemi NTHL045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 66A
Input Capacitance: 1870pF
Power Dissipation: 291W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
20
USA:
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$7.10
USD
Quantity
Unit Price
1
$7.10
5
$7.02
30
$6.93
100
$6.88
300+
$6.77