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Manufacturer Part #

NTHL045N065SC1

N-Channel 650 V 66 A 291 W Through Hole Silicon Carbide MOSFET - TO-247-3

Product Specification Section
onsemi NTHL045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 66A
Input Capacitance: 1870pF
Power Dissipation: 291W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
2,250
USA:
2,250
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,046.50
USD
Quantity
Unit Price
450+
$6.77