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Manufacturer Part #

NTHL045N065SC1

N-Channel 650 V 66 A 291 W Through Hole Silicon Carbide MOSFET - TO-247-3

Product Specification Section
onsemi NTHL045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 66A
Input Capacitance: 1870pF
Power Dissipation: 291W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
65
Germany (Online Only):
65
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$6.82
USD
Quantity
Unit Price
1
$6.82
5
$6.75
30
$6.66
100
$6.60
300+
$6.50