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Manufacturer Part #

NTH4L045N065SC1

N-Channel 650 V 55 A 187 W Through Hole Silicon Carbide MOSFET - TO-247-4L

Product Specification Section
onsemi NTH4L045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 55A
Input Capacitance: 1870pF
Power Dissipation: 187W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$6.96
USD
Quantity
Unit Price
1
$6.96
5
$6.88
30
$6.79
100
$6.74
300+
$6.63