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Manufacturer Part #

NTH4L045N065SC1

N-Channel 650 V 55 A 187 W Through Hole Silicon Carbide MOSFET - TO-247-4L

Product Specification Section
onsemi NTH4L045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 55A
Input Capacitance: 1870pF
Power Dissipation: 187W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
1,140
Germany (Online Only):
1,140
On Order:
0
Factory Stock:Factory Stock:
91,350
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$213.60
USD
Quantity
Unit Price
30
$7.12
90
$7.07
120
$7.05
300
$7.00
450+
$6.96