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Manufacturer Part #

SCT2H12NZGC11

SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM

Product Specification Section
ROHM SCT2H12NZGC11 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 3.7A
Input Capacitance: 184pF
Power Dissipation: 35W
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
450
Multiple Of:
30
Total
$1,633.50
USD
Quantity
Web Price
30
$3.63
900
$3.57
1,350
$3.54
1,800+
$3.50