Manufacturer Part #
QSE133
QSE133 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Bag Package Style:RADIAL Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi QSE133 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi QSE133 - Technical Attributes
Attributes Table
| Wavelength: | 880nm |
| Angle of Half Sensitivity: | ±25° |
| Power Dissipation: | 100mW |
| CE Voltage-Max: | 30V |
| Collector Current @ 25C: | 9mA |
| Package Style: | RADIAL |
| Mounting Method: | Through Hole |
Features & Applications
The QSE133 is a 30 V 880 nm, Through Hole Plastic Silicon Infrared Phototransistor. Its Operating temperature ranges from -40 °C to 100 °C.
Features:
- NPN Silicon Phototransistor
- Package Type: Sidelooker
- Medium wide reception angle, 50°
- Package material and color: black epoxy
- Matched emitter: QEE113
- Daylight filter
- High sensitivity
Applications:
- Automation
- Building & Home Controls
- Medical Electronics/Devices
- Home Audio System Components
- Consumer Appliances
View the QSE1 Series of Phototransistor
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Web Price
1
$0.33
200
$0.32
750
$0.305
2,500
$0.295
10,000+
$0.275
Product Variant Information section
Available Packaging
Package Qty:
500 per Bag
Package Style:
RADIAL
Mounting Method:
Through Hole