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Manufacturer Part #

SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

Product Specification Section
STMicroelectronics SCT30N120 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 45A
Input Capacitance: 1700pF
Power Dissipation: 270W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
3,750
Germany (Online Only):
3,750
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$444.90
USD
Quantity
Web Price
30
$14.83
60
$14.74
90
$14.69
120
$14.65
150+
$14.54