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Manufacturer Part #

SCT2H12NYTB

N-Channel 1700 V 1.5 Ohm Surface Mount SiC Power Mosfet - TO-268-2

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM SCT2H12NYTB - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 4A
Input Capacitance: 184pF
Power Dissipation: 44W
Package Style:  TO-268 (D3PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
800
Multiple Of:
400
Total
$2,368.00
USD
Quantity
Web Price
400
$3.01
800
$2.96
1,200
$2.93
1,600+
$2.90
Product Variant Information section