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Manufacturer Part #

SCT070W120G3-4AG

Sic PMOSFET 800 - 1200 V POWER TRANSISTORS

Product Specification Section
STMicroelectronics SCT070W120G3-4AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 30A
Input Capacitance: 900pF
Power Dissipation: 236W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
32 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,632.00
USD
Quantity
Unit Price
30
$7.91
90
$7.84
120
$7.83
300
$7.77
450+
$7.72