text.skipToContent text.skipToNavigation

Manufacturer Part #

SCT070W120G3-4AG

Sic PMOSFET 800 - 1200 V POWER TRANSISTORS

Product Specification Section
STMicroelectronics SCT070W120G3-4AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 30A
Input Capacitance: 900pF
Power Dissipation: 236W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$8.11
USD
Quantity
Unit Price
1
$8.11
5
$8.01
25
$7.92
100
$7.84
250+
$7.72