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Manufacturer Part #

SCT025W120G3-4AG

1200 V 56 A 37 mOhm Single N-Channel Silicon Carbide Power MOSFET - HiP247-4

Product Specification Section
STMicroelectronics SCT025W120G3-4AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 56A
Input Capacitance: 1990pF
Power Dissipation: 388W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
6,695
Germany (Online Only):
6,695
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$14.99
USD
Quantity
Unit Price
1
$14.99
5
$14.79
25
$14.60
50
$14.52
150+
$14.28