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onsemi | NVH4L022N120M3S

Manufacturer Part #

NVH4L022N120M3S

N-Channel 1200 V 68 A 352 W Through Hole Silicon Carbide MOSFET - TO-247-4L
ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2316
Product Specification Section
onsemi NVH4L022N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 89A
Input Capacitance: 3175pF
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
25
USA:
25
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$15.72
USD
Quantity
Unit Price
1
$15.72
5
$15.52
25
$15.32
50
$15.23
150+
$14.97
Product Variant Information section