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onsemi | NTH4L060N065SC1

Manufacturer Part #

NTH4L060N065SC1

N-Channel 650 V 47 A 176 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2221
Product Specification Section
onsemi NTH4L060N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 47A
Input Capacitance: 1473pF
Power Dissipation: 176W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
57
USA:
57
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$5.56
USD
Quantity
Unit Price
1
$5.56
10
$5.50
40
$5.45
125
$5.40
400+
$5.32
Product Variant Information section