text.skipToContent text.skipToNavigation

Manufacturer Part #

NTH4L030N120M3S

N-Channel 1200 V 73 A 313 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2325
Product Specification Section
onsemi NTH4L030N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 73A
Input Capacitance: 2430pF
Power Dissipation: 313W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
210
Germany (Online Only):
210
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$180.30
USD
Quantity
Web Price
30
$6.01
90
$5.96
150
$5.94
300
$5.91
600+
$5.87