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Manufacturer Part #

NTH4L025N065SC1

N-Channel 650 V 99 A 348 W Through Hole Silicon Carbide MOSFET - TO-247-4L

Product Specification Section
onsemi NTH4L025N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 99A
Input Capacitance: 3480pF
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,639.50
USD
Quantity
Unit Price
1+
$10.31