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Manufacturer Part #

NTBG160N120SC1

N-Channel 1200 V 19.5 A 136 W Surface Mount Silicon Carbide MOSFET - D2PAK-7

Product Specification Section
onsemi NTBG160N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 19.5A
Input Capacitance: 678pF
Power Dissipation: 136W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
7,200
USA:
7,200
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,104.00
USD
Quantity
Unit Price
800+
$3.88