Manufacturer Part #
IMW120R020M1HXKSA1
SiC, 1200V, 98A, 20MOHM, N-CHANNEL, PG-TO247-3
Product Specification Section
Infineon IMW120R020M1HXKSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMW120R020M1HXKSA1 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 98A |
Input Capacitance: | 3460pF |
Power Dissipation: | 375W |
Operating Temp Range: | -55°C to +175°C |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Web Price
1
$12.84
5
$12.68
25
$12.52
75
$12.42
200+
$12.23
Product Variant Information section
Available Packaging
Package Qty:
1 per Bulk
Package Style:
TO-247-3
Mounting Method:
Through Hole