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Manufacturer Part #

IMW120R020M1HXKSA1

SiC, 1200V, 98A, 20MOHM, N-CHANNEL, PG-TO247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2352
Product Specification Section
Infineon IMW120R020M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 98A
Input Capacitance: 3460pF
Power Dissipation: 375W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
180
USA:
180
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$375.00
USD
Quantity
Web Price
30
$12.50
60
$12.43
90
$12.39
150
$12.34
300+
$12.23
Product Variant Information section