
Manufacturer Part #
STD10P6F6
P-Channel 60 V 160 mΩ 6.4 nC SMT STripFET™ VI DeepGATE™ Mosfet -TO-252
Product Specification Section
STMicroelectronics STD10P6F6 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STD10P6F6 - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 160mΩ |
Rated Power Dissipation: | 35W |
Qg Gate Charge: | 6.4nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 10A |
Turn-on Delay Time: | 64ns |
Turn-off Delay Time: | 14ns |
Rise Time: | 5.3ns |
Fall Time: | 3.7ns |
Gate Source Threshold: | 4V |
Input Capacitance: | 340pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
2,500
USA:
2,500
Factory Lead Time:
13 Weeks
Quantity
Unit Price
2,500
$0.355
5,000
$0.35
7,500+
$0.345
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount