Manufacturer Part #
SIDR680ADP-T1-RE3
Vishay N-Channel 80V (D-S)
Product Specification Section
Vishay SIDR680ADP-T1-RE3 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
File
Date
Fabrication Site Change
02/02/2023 Details and Download
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Part Status:
Active
Active
Vishay SIDR680ADP-T1-RE3 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 2.88mΩ |
Rated Power Dissipation: | 6.25W |
Qg Gate Charge: | 55nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 30.7A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 30ns |
Rise Time: | 8ns |
Fall Time: | 9ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3.5V |
Input Capacitance: | 4415pF |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
N/A
Quantity
Web Price
3,000+
$1.32
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount