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Manufacturer Part #

PSMN4R8-100YSEX

PSMN4R8 Series 100 V 4.8 mOhm 120 A ASFET N-Channel Enhancement MOSFET -LFPAK56E

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2440
Product Specification Section
Nexperia PSMN4R8-100YSEX - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 294W
Qg Gate Charge: 80nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 36ns
Rise Time: 24ns
Fall Time: 28ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.6V
Input Capacitance: 5920pF
Package Style:  POWERSO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,500
Germany (Online Only):
1,500
1,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1500
Multiple Of:
1500
Total
$1,680.00
USD
Quantity
Unit Price
1,500
$1.12
3,000+
$1.10
Product Variant Information section