Manufacturer Part #
PSMN4R8-100YSEX
PSMN4R8 Series 100 V 4.8 mOhm 120 A ASFET N-Channel Enhancement MOSFET -LFPAK56E
Product Specification Section
Nexperia PSMN4R8-100YSEX - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Nexperia PSMN4R8-100YSEX - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 4.8mΩ |
Rated Power Dissipation: | 294W |
Qg Gate Charge: | 80nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 120A |
Turn-on Delay Time: | 22ns |
Turn-off Delay Time: | 36ns |
Rise Time: | 24ns |
Fall Time: | 28ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.6V |
Input Capacitance: | 5920pF |
Package Style: | POWERSO-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
1,500
$1.12
3,000+
$1.10
Product Variant Information section
Available Packaging
Package Qty:
1500 per Reel
Package Style:
POWERSO-8
Mounting Method:
Surface Mount