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onsemi | NTE4153NT1G

Manufacturer Part #

NTE4153NT1G

Single N-Channel 20 V 950 mOhm 1.82 nC 300 mW Silicon SMT Mosfet - SC-89-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi NTE4153NT1G - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 950mΩ
Rated Power Dissipation: 300mW
Qg Gate Charge: 1.82nC
Gate-Source Voltage-Max [Vgss]: 6V
Drain Current: 915mA
Turn-on Delay Time: 3.7ns
Turn-off Delay Time: 25ns
Rise Time: 4.4ns
Fall Time: 7.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.1V
Technology: Si
Height - Max: 0.8mm
Length: 1.7mm
Input Capacitance: 110pF
Package Style:  SC-89
Mounting Method: Surface Mount
Features & Applications
The NTE4153NT1G is a part of NTE41 series power MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SC-89 package.

Features:

  • Low RDS(on) Improving System Efficiency
  • Low Threshold Voltage, 1.5 V Rated
  • ESD Protected Gate
  • Pb−Free Packages are Available

Applications:

  • Load/Power Switches
  • Power Supply Converter Circuits
  • Battery Management
  • Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
15000
Multiple Of:
3000
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Total
$753.00
USD
Quantity
Unit Price
3,000
$0.0521
9,000
$0.0508
15,000
$0.0502
30,000
$0.0494
60,000+
$0.0482
Product Variant Information section