Manufacturer Part #
IXFK32N100Q3
N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264
IXYS IXFK32N100Q3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Part Status:
IXYS IXFK32N100Q3 - Technical Attributes
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 1000V |
Drain-Source On Resistance-Max: | 320mΩ |
Rated Power Dissipation: | 1250|W |
Qg Gate Charge: | 195nC |
Package Style: | TO-264 |
Mounting Method: | Through Hole |
Available Packaging
Package Qty:
25 per Tube
Package Style:
TO-264
Mounting Method:
Through Hole