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Manufacturer Part #

IXFK32N100Q3

N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264

ECAD Model:
Mfr. Name: IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
IXYS IXFK32N100Q3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1000V
Drain-Source On Resistance-Max: 320mΩ
Rated Power Dissipation: 1250|W
Qg Gate Charge: 195nC
Package Style:  TO-264
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
300
Multiple Of:
25
Total
$9,192.00
USD
Quantity
Unit Price
25
$31.27
50
$31.08
75
$30.97
100
$30.89
125+
$30.64
Product Variant Information section