Manufacturer Part #
ISC022N10NM6ATMA1
Single N-Channel 100 V 2.24 mOhm 91 nC OptiMOS Power Mosfet - PG-TDSON-8 FL
Product Specification Section
Infineon ISC022N10NM6ATMA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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Infineon ISC022N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 2.24mΩ |
Rated Power Dissipation: | 3W |
Qg Gate Charge: | 73nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 25A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 30ns |
Rise Time: | 6ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.8V |
Technology: | OptiMOS |
Input Capacitance: | 5400pF |
Series: | OptiMOS 6 |
Package Style: | PG-TSON-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
9
USA:
9
Product Variant Information section
Available Packaging
Package Qty:
5000 per
Package Style:
PG-TSON-8
Mounting Method:
Surface Mount