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Manufacturer Part #

ISC022N10NM6ATMA1

Single N-Channel 100 V 2.24 mOhm 91 nC OptiMOS Power Mosfet - PG-TDSON-8 FL

Product Specification Section
Infineon ISC022N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.24mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 73nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 30ns
Rise Time: 6ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 5400pF
Series: OptiMOS 6
Package Style:  PG-TSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2
Germany (Online Only):
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.66
USD
Quantity
Unit Price
1
$1.66
20
$1.60
100
$1.57
500
$1.55
2,500+
$1.51