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Manufacturer Part #

IRL520NSTRLPBF

Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK

Product Specification Section
Infineon IRL520NSTRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.26Ω
Rated Power Dissipation: 3.8W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 10A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 23ns
Rise Time: 35ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 4.83mm
Length: 9.65mm
Input Capacitance: 440pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$308.00
USD
Quantity
Web Price
800
$0.385
1,600
$0.375
3,200
$0.37
4,000
$0.365
12,000+
$0.35