
Manufacturer Part #
IRFR3607TRPBF
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3
Product Specification Section
Infineon IRFR3607TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRFR3607TRPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 75V |
Drain-Source On Resistance-Max: | 9mΩ |
Rated Power Dissipation: | 140W |
Qg Gate Charge: | 84nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 80A |
Turn-on Delay Time: | 16ns |
Turn-off Delay Time: | 43ns |
Rise Time: | 110ns |
Fall Time: | 96ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 3070pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Features & Applications
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
2,000
$0.46
4,000
$0.455
6,000
$0.45
8,000+
$0.445
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount