IRFR3607TRPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRFR3607TRPBF

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon IRFR3607TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 9mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 43ns
Rise Time: 110ns
Fall Time: 96ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 3070pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications
The IRFR3607TRPBF is a 75 V 56 A 140 W single N-Channel Hexfet Power Mosfet available in TO-252AA Surface mount Package. It has an Operating temperature ranging from -55 to 175°C.

Benefits:

  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability

Applications:

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
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Pricing Section
Global Stock:
0
USA:
0
26,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
6000
Multiple Of:
2000
Total
$2,700.00
USD
Quantity
Unit Price
2,000
$0.46
4,000
$0.455
6,000
$0.45
8,000+
$0.445