Manufacturer Part #
IPT012N08N5ATMA1
Single N-Channel 80 V 1.2 mOhm 178 nC OptiMOS™ Power Mosfet - HSOF-8-1
Product Specification Section
Infineon IPT012N08N5ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Assembly Site/Material Change
01/13/2023 Details and Download
Part Status:
Active
Active
Infineon IPT012N08N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 1.2mΩ |
Rated Power Dissipation: | 375|W |
Qg Gate Charge: | 178nC |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
4,000
USA:
2,000
Germany (Online Only):
2,000
Factory Lead Time:
20 Weeks
Quantity
Unit Price
2,000+
$3.21
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Mounting Method:
Surface Mount