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Manufacturer Part #

IPT012N08N5ATMA1

Single N-Channel 80 V 1.2 mOhm 178 nC OptiMOS™ Power Mosfet - HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2422
Product Specification Section
Infineon IPT012N08N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.2mΩ
Rated Power Dissipation: 375|W
Qg Gate Charge: 178nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
4,000
USA:
2,000
Germany (Online Only):
2,000
4,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$6,420.00
USD
Quantity
Unit Price
2,000+
$3.21