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Manufacturer Part #

IPP016N08NF2SAKMA1

Single N-Channel 80 V 1.6 mOhm 170 nC StrongIRFET™ 2 Power MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2235
Product Specification Section
Infineon IPP016N08NF2SAKMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.6mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 170nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 196A
Turn-on Delay Time: 24.5ns
Turn-off Delay Time: 71.9ns
Rise Time: 71.5ns
Fall Time: 44.1ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 12000pF
Series: StrongIRFET™ 2
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications
Infineon's StrongIRFET™ 2 power MOSFET 80V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features
 •Broad availability from distribution partners
 •Excellent price/performance ratio
 •Ideal for high- and low-switching frequency
 •Industry standard footprint through-hole package
 •High current rating
 •Capable of wave-soldering


Benefits
 •Multi-vendor compatibility
 •Right-fit products
 •Supports a wide variety of applications
 •Standard pinout allows for drop-in replacement
 •Increased current carrying capability
 •Ease of manufacturing
Pricing Section
Global Stock:
200
Germany (Online Only):
200
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
50
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$66.00
USD
Quantity
Unit Price
50
$1.32
200
$1.30
500
$1.29
1,250
$1.27
2,000+
$1.25
Product Variant Information section