Manufacturer Part #
IPB068N20NM6ATMA1
200 V 15.4 A 3.8 W Surface Mount N-Channel MOSFET - PG-TO263-3-2
Product Specification Section
Infineon IPB068N20NM6ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
Infineon IPB068N20NM6ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 6.3mΩ |
Rated Power Dissipation: | 3.8W |
Qg Gate Charge: | 110nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 15.4A |
Operating Temp Range: | -55°C to +175°C |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
50
USA:
50
Product Variant Information section
Available Packaging
Package Qty:
1000 per
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount