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Manufacturer Part #

IPA030N10NF2SXKSA1

Single N-Channel 100 V 3 mOhm 103 nC StrongIRFET™ 2 Power MOSFET - TO-220-FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon IPA030N10NF2SXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 41W
Qg Gate Charge: 103nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 83A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 47ns
Rise Time: 65s
Fall Time: 26s
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 7300pF
Series: StrongIRFET™ 2
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Features & Applications
Infineon's StrongIRFET™ 2 power MOSFET 100V features RDS(on) of 3 mOhm, addressing a broad range of applications from low- to high-switching frequency.Compared to the previous technology the IPA030N10NF2S achieves 40 percent Qg improvement and 25 percent lower Qrr.


Summary of Features
 •Broad availability from distribution partners
 •Excellent price/performance ratio
 •Ideal for high- and low- switching frequency
 •Industry standard footprint through-hole package
 •High current rating
 •Capable of wave-soldering


Benefits
 •Multi-vendor compatibility
 •Right-fit products
 •Supports a wide variety of applications
 •Standard pinout allows for drop-in replacement
 •Increased current carrying capability
 •Ease of manufacturing
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
500
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$720.00
USD
Quantity
Unit Price
50
$1.44
1,000
$1.43
1,500
$1.42
2,000
$1.41
2,500+
$1.40
Product Variant Information section