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Manufacturer Part #

IMT65R039M1HXUMA1

CoolSiC Series 650 V 61 A 51 mOhm Single N-Channel MOSFET - PG-HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2311
Product Specification Section
Infineon IMT65R039M1HXUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 263W
Qg Gate Charge: 41nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 122A
Turn-on Delay Time: 7.1ns
Turn-off Delay Time: 17.4ns
Rise Time: 10.9ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5.7V
Input Capacitance: 1393pF
Package Style:  HSOF-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
15
Germany (Online Only):
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$4.58
USD
Quantity
Unit Price
1
$4.58
15
$4.43
50
$4.36
250
$4.28
1,000+
$4.17