Manufacturer Part #
IMT65R039M1HXUMA1
CoolSiC Series 650 V 61 A 51 mOhm Single N-Channel MOSFET - PG-HSOF-8
Product Specification Section
Infineon IMT65R039M1HXUMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMT65R039M1HXUMA1 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 39mΩ |
Rated Power Dissipation: | 263W |
Qg Gate Charge: | 41nC |
Gate-Source Voltage-Max [Vgss]: | 23V |
Drain Current: | 122A |
Turn-on Delay Time: | 7.1ns |
Turn-off Delay Time: | 17.4ns |
Rise Time: | 10.9ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 5.7V |
Input Capacitance: | 1393pF |
Package Style: | HSOF-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
15
Germany (Online Only):
15
On Order:
0
Factory Lead Time:
23 Weeks
Quantity
Unit Price
1
$4.58
15
$4.43
50
$4.36
250
$4.28
1,000+
$4.17
Product Variant Information section
Available Packaging
Package Qty:
2000 per
Package Style:
HSOF-8
Mounting Method:
Surface Mount