Name: onsemi FDV301N
Brand: onsemi
SKU: 7184706
Price: 0.0276 USD
Availability: InStock

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Image for illustration purposes only,
refer to technical specifications

Manufacturer Part #

FDV301N

N-Channel 25 V 4 Ohm Surface Mount Digital FET - SOT-23-3

FDV301N Datasheet
ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model.
Mfr. Name:	onsemi
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 3000 per Reel Package Style: SOT-23 (SC-59,TO-236) Mounting Method: Surface Mount
Date Code:	2423

onsemi FDV301N - Technical Attributes

Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	25V
Drain-Source On Resistance-Max:	4Ω
Rated Power Dissipation:	0.35\|W
Qg Gate Charge:	0.7nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

Features & Applications

The FDV301N is a 25 V 5 Ω N-Channel logic level enhancement mode field effect transistor is produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values

Features:

25 V, 0.22 A continuous, 0.5 A Peak.
RDS(ON) = 5 Ω @ VGS= 2.7 V,
RDS(ON) = 4 Ω @ VGS= 4.5 V.
Very low level gate drive requirements
Operates in 3 V circuits. VGS(th) 1.5 V.
Gate-Source Zener for ESD ruggedness.
6 kV Human Body Model.
Replace multiple NPN digital transistors with one DMOS FET.

Applications:

Load switch
DC/DC converter
Motor drives