Manufacturer Part #
DMN53D0LDW-7
Dual N-Channel 50 V 310 mW 0.6 nC Silicon Surface Mount Mosfet - SOT-363
Product Specification Section
Diodes Incorporated DMN53D0LDW-7 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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Diodes Incorporated DMN53D0LDW-7 - Technical Attributes
Attributes Table
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 50V |
Drain-Source On Resistance-Max: | 4.5Ω |
Rated Power Dissipation: | 310mW |
Qg Gate Charge: | 0.6nC |
Gate-Source Voltage-Max [Vgss]: | 1.5V |
Drain Current: | 360mA |
Turn-on Delay Time: | 2.7ns |
Turn-off Delay Time: | 19ns |
Rise Time: | 2.5ns |
Fall Time: | 11ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.5V |
Technology: | Si |
Height - Max: | 1mm |
Length: | 2.2mm |
Input Capacitance: | 46pF |
Pricing Section
Global Stock:
939,000
USA:
939,000
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Web Price
3,000
$0.0368
9,000
$0.0355
30,000
$0.0341
60,000
$0.0333
120,000+
$0.0319
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel