Manufacturer Part #
DMN53D0LDW-7
Dual N-Channel 50 V 310 mW 0.6 nC Silicon Surface Mount Mosfet - SOT-363
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| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per | ||||||||||
| Date Code: | 2242 | ||||||||||
Product Specification Section
Diodes Incorporated DMN53D0LDW-7 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMN53D0LDW-7 - Technical Attributes
Attributes Table
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 50V |
| Drain-Source On Resistance-Max: | 4.5Ω |
| Rated Power Dissipation: | 310mW |
| Qg Gate Charge: | 0.6nC |
| Gate-Source Voltage-Max [Vgss]: | 1.5V |
| Drain Current: | 360mA |
| Turn-on Delay Time: | 2.7ns |
| Turn-off Delay Time: | 19ns |
| Rise Time: | 2.5ns |
| Fall Time: | 11ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.5V |
| Technology: | Si |
| Height - Max: | 1mm |
| Length: | 2.2mm |
| Input Capacitance: | 46pF |
Pricing Section
Global Stock:
5
Germany (Online Only):
5
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Web Price
1
$0.0479
15
$0.0418
75
$0.0385
300
$0.0359
1,500+
$0.032
Product Variant Information section
Available Packaging
Package Qty:
3000 per