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Manufacturer Part #

DMG1026UV-7

Dual N-Channel 60 V 2.1 Ohm 0.45 pC 0.65 W Silicon SMT Mosfet - SOT-563

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Date Code: 2327
Product Specification Section
Diodes Incorporated DMG1026UV-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.1Ω
Rated Power Dissipation: 0.65W
Qg Gate Charge: 0.45pC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 410mA
Turn-on Delay Time: 3.4ns
Turn-off Delay Time: 26.4ns
Rise Time: 3.4ns
Fall Time: 16.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Technology: Si
Height - Max: 0.6mm
Length: 1.7mm
Input Capacitance: 32pF
Package Style:  SOT-563
Mounting Method: Surface Mount
Pricing Section
Global Stock:
36,000
Germany (Online Only):
36,000
On Order:
0
Factory Stock:Factory Stock:
957,000
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$200.70
USD
Quantity
Unit Price
3,000
$0.0669
9,000
$0.0652
12,000
$0.0647
30,000
$0.0634
45,000+
$0.062