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Product Specification Section
onsemi MMBT5551LT1G - Technical Attributes
Attributes Table
Polarity: NPN
Type: General Purpose
CE Voltage-Max: 160V
Collector Current Max: 600mA
Power Dissipation-Tot: 225mW
Collector - Base Voltage: 180V
Collector - Emitter Saturation Voltage: 0.2V
Emitter - Base Voltage: 6V
DC Current Gain-Min: 30
Collector - Current Cutoff: 50nA
Configuration: Single
Operating Temp Range: -55°C to +150°C
Moisture Sensitivity Level: 1
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The MMBT5551LT1G is a NPN silicon high voltage transistor with voltage of 160 V, available in a SOT-23 package.

Features:

  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
60000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$876.00
USD
Quantity
Web Price
3,000
$0.0161
9,000
$0.0155
30,000
$0.0149
60,000
$0.0146
120,000+
$0.0139