MMBT5551LT1G in Cut Tape by onsemi | Bipolar (BJT) Transistors | Future Electronics
text.skipToContent text.skipToNavigation

Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Bipolar (BJT) Transistors
  6. MMBT5551LT1G

onsemi | MMBT5551LT1G

Manufacturer Part #

MMBT5551LT1G

MMBT5551L Series 160 V 600 mA Surface Mount NPN Transistor - SOT-23

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2028
Product Specification Section
onsemi MMBT5551LT1G - Technical Attributes
Attributes Table
Polarity: NPN
Type: General Purpose
CE Voltage-Max: 160V
Collector Current Max: 600mA
Power Dissipation-Tot: 225mW
Collector - Base Voltage: 180V
Collector - Emitter Saturation Voltage: 0.2V
Emitter - Base Voltage: 6V
DC Current Gain-Min: 30
Collector - Current Cutoff: 50nA
Configuration: Single
Operating Temp Range: -55°C to +150°C
Moisture Sensitivity Level: 1
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The MMBT5551LT1G is a NPN silicon high voltage transistor with voltage of 160 V, available in a SOT-23 package.

Features:

  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Pricing Section
Global Stock:
23,861
USA:
23,861
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1
Multiple Of:
1
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.13
USD
Quantity
Unit Price
1
$0.125
15
$0.0905
75
$0.0702
300
$0.0527
1,500+
$0.0325
Product Variant Information section